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The Microchip Technology 1N3017B-1 is a silicon Zener diode designed for voltage regulation applications. It features a nominal Zener voltage of 7.5 V with a tolerance of ±5%. The device supports a maximum DC power dissipation of 1 W at a lead temperature of +95°C, with a power derating factor of 12.5 mW/°C above this threshold. It operates within an extended temperature range from -65°C to +175°C and utilizes a hermetically sealed axial-leaded glass DO-41 package.
Verify the specific suffix (JAN, JANTX, or JANTXV) against the required qualification level, as these denote different manufacturing standards under MIL-PRF-19500/115. Confirm that the DO-41 package dimensions align with the target PCB layout. Ensure the thermal management design accounts for the 12.5 mW/°C derating curve above +95°C lead temperature to maintain the 1 W rating.
Select this component when a stable 7.5 V reference is needed in extreme thermal conditions up to +175°C. The DO-41 through-hole package facilitates manual assembly or standard wave soldering processes. Consider the metallurgical bonding for superior mechanical stability compared to standard epoxy encapsulated diodes in vibration-prone environments.
This part belongs to the 1N3016B-1 through 1N3045B-1 series of 1-watt Zener diodes. These components are manufactured according to the MIL-PRF-19500/115 specification, ensuring rigorous quality control for defense and space applications. The series offers various voltage options within the same physical footprint.
Compatible substitutes include JAN1N3017B-1 and JANTX1N3017B-1, provided the specific reliability tier matches the system requirements. Cross-reference with other manufacturers' MIL-spec equivalents only if they explicitly certify compliance to MIL-PRF-19500/115.