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The 1N3026B-1 is a silicon Zener diode manufactured by Microchip Technology, designed for voltage regulation applications. It features an 18V nominal Zener voltage with a ±5% tolerance and a maximum power dissipation of 1W at 25°C. The device operates within a temperature range of -55°C to +175°C junction temperature. Key electrical parameters include a test current of 14mA, a maximum dynamic impedance of 20 Ohms, and a reverse leakage current of 10µA at 13.7V. It utilizes a DO-204AL (DO-41) axial through-hole package.
Verify the manufacturer source carefully, as this component has been produced by multiple entities including Microsemi and VPT Inc. Confirm that the specific suffix '-1' corresponds to the intended JEDEC registration and package style. Ensure the supplier provides documentation matching the required military or commercial grade specifications if applicable.
Select this component when a precise 18V regulation point is required with high thermal stability. The DO-41 package suits through-hole designs needing robust mechanical mounting. Consider the 20 Ohm dynamic impedance for noise-sensitive applications and verify the 1W power rating against actual circuit dissipation requirements.
This part belongs to the established 1N3016B-1 through 1N3045B-1 series of silicon voltage regulator diodes. Originally registered under JEDEC standards, these components are widely recognized for their reliability in industrial and aerospace environments. The series offers various voltage options within the same physical form factor.
Equivalent parts include the generic 1N3026B from other manufacturers. Verify pinout compatibility and ensure the replacement meets the 1W power and 18V voltage specifications.