1N3154

1N3154

$4.75
  • Description:DIODE ZENER 8.4V 500MW DO7
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk

SKU:6c7ccd1f04d6 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ZENER 8.4V 500MW DO7
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Voltage - Zener (Nom) (Vz):8.4 V
  • Tolerance:±5%
  • Power - Max:500 mW
  • Impedance (Max) (Zzt):15 Ohms
  • Current - Reverse Leakage @ Vr:10 µA @ 5.5 V
  • Operating Temperature:-65°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:DO-204AA, DO-7, Axial
  • Voltage - Forward (Vf) (Max) @ If:-

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1N3154

Overview

The Microchip Technology 1N3154 is an 8.4 Volt Temperature Compensated Zener Reference Diode housed in a hermetically sealed glass DO-7 (DO-204AA) axial-lead package. It operates within a temperature range of -65°C to +175°C with a DC power dissipation of 500 mW at 25°C lead temperature. The device provides a nominal voltage between 8.00 V and 8.80 V when tested at 10 mA, featuring a maximum reverse current of 10 µA at 5.5 V. Its maximum zener impedance is 15 ohms, and it exhibits a maximum temperature stability of 130 mV over the -55°C to +100°C range, corresponding to a temperature coefficient of 0.01 %/°C.

Feature Summary

  • Provides minimal voltage changes over a broad temperature range for stable reference applications
  • Features internal metallurgical bonds and flexible axial-lead mounting terminals
  • Non-sensitive to electrostatic discharge per MIL-STD-750 Method 1020

Applications

  • Instrumentation requiring stable voltage references
  • Circuit designs demanding minimal voltage change with temperature
  • Military qualification systems up to JANTXV level

Procurement Notes

Verify specific ordering suffixes such as e3 for RoHS compliance or -1 for military qualification against MIL-PRF-19500/158 requirements. Confirm tolerance selections like 1% or 2% are appended correctly if tighter voltage specifications are needed. Ensure the manufacturer designation aligns with current Microchip Technology documentation rather than legacy Microsemi references.

Selection Notes

Select this component when a standard 8.4 V reference with a 0.01 %/°C temperature coefficient is required. Consider higher-grade variants like the 1N3157 series if lower temperature coefficients down to 0.001 %/°C are necessary for precision environments. Verify that the operating current remains near 10.0 mA to achieve optimal voltage-temperature stability and minimize power dissipation effects.

Part Context

This diode belongs to the JEDEC registered 1N3154 through 1N3157A series of Zero-TC Reference Diodes. The series offers various temperature coefficient options ranging from 0.01%/°C to 0.001%/°C while maintaining the same 8.4 V nominal voltage. The product line includes radiation-hardened equivalents prefixed with RH and commercial RoHS-compliant versions suffixed with e3.

Replacement Considerations

Equivalent devices include the 1N3155, 1N3156, and 1N3157 series which share the same package and nominal voltage but offer progressively lower temperature coefficients. Radiation-hardened alternatives are available under the RH prefix, such as RH3154.

FAQ

How does operating current affect the temperature coefficient?

Operating the diode at currents other than the specified 10.0 mA will alter the temperature coefficient. Graphs provided in the datasheet allow estimation of these changes based on the specific operating current.

What is the recommended operating current for best stability?

For optimum voltage-temperature stability, the datasheet recommends an operating current (IZ) of 10.0 mA, which results in less than 90 mW of dissipated power.

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