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The Microchip Technology 1N3309RB is a high-power 50 W Zener diode with a nominal voltage of 10.0 V and a maximum dynamic impedance of 0.60 ohms at the test current of 1200 mA. It features reverse polarity (cathode to case) indicated by the 'R' suffix, housed in a hermetically sealed DO-5 metal package. The device operates within a junction temperature range of -65°C to +175°C and includes internal solder bond construction for robust performance.
Verify that the specific part number matches the required reverse polarity configuration, as standard units feature anode-to-case connections. Confirm thermal management requirements align with the specified DC power dissipation limits and derating curves. Ensure compatibility with the DO-5 hexagonal stud mounting hardware and verify any necessary military screening levels if applicable.
Select this component when a 10 V reference with high power handling capability is needed. The reverse polarity variant is essential for designs where the case must serve as the cathode terminal. Consider the low thermal resistance and radiation hardness for demanding operational environments compared to standard commercial packages.
This device belongs to the 1N3305 through 1N3350B series of 50 Watt Zener diodes manufactured by Microsemi (now Microchip Technology). These components are JEDEC registered and designed for high-power voltage regulation. The RB suffix specifically denotes the reversed polarity version within this established industrial and military-grade product line.
Consult the manufacturer for surface mount equivalents. Other parts in the 1N3305-1N3350B series may be considered if voltage ratings match, but polarity and tolerance specifications must be verified against the original design requirements.
The 'R' suffix indicates reverse polarity, meaning the cathode is connected to the case instead of the standard anode-to-case connection.
Yes, the device is inherently radiation hard as described in Microsemi MicroNote 050.