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The Microchip Technology 1N3311B is a high-power 50 W Zener diode within the JEDEC registered 1N3305 through 1N3350B series. It provides voltage regulation with a nominal Zener voltage of 12 V and a test current (IZT) of 1,000 mA. The device features a maximum dynamic impedance (ZZT) of 1.0 Ohm at IZT and 80 Ohms at IZK = 5 mA. Maximum DC Zener current (IZM) is 3,800 mA, with a maximum reverse current (IR) of 10 µA at 9.1 V. Standard polarity connects the anode to the case.
Verify the specific tolerance suffix required for your design, as the 'B' suffix denotes ±5% Zener voltage tolerance. Confirm polarity requirements; standard units have anode-to-case polarity, while reverse polarity requires an 'R' suffix. Ensure mounting hardware matches the DO-5 hexagonal stud specifications for proper heat sinking and electrical isolation if necessary.
Select this component when designs require high power dissipation capabilities up to 50 W with adequate heat sinking. Consider the operating temperature range of -65°C to +175°C for extreme environment applications. Verify that the system can accommodate the physical size and mounting style of the DO-5 package. Check for military qualification prefixes if enhanced screening is mandated by the application standards.
This part belongs to the Microsemi Scottsdale Division 1N3305–1N3350B series of 50 Watt Zener Diodes. These devices are designed for broad voltage regulation ranges from 3.9 V to 200 V. The series is characterized by low thermal resistance and high power handling, making it suitable for demanding power electronics applications where reliability and voltage stability are critical.
Consult factory for surface mount equivalents. Military qualified versions include JAN, JANTX, and JANTXV prefixes.