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The Microchip Technology 1N3311RB is a high-power 50 W Zener diode from the 1N3305 through 1N3350B series. It provides voltage regulation with a nominal Zener voltage of 12 V at a test current of 1,000 mA and a maximum dynamic impedance of 1.00 Ohms. The device features reverse polarity (cathode to case) indicated by the 'R' suffix and offers a standard tolerance of ±5%. It operates within a junction temperature range of -65°C to +175°C and utilizes a hermetically sealed DO-5 (DO-203AB) package.
Verify that the specific part number includes the 'R' suffix to confirm the reversed polarity configuration where the cathode is connected to the case. Ensure the procurement documentation specifies the B suffix for the required ±5% Zener voltage tolerance. Confirm compliance with relevant military specifications if the application demands JAN or JANTX screening levels.
Select this component when a 12 V reference with high power dissipation capability is required. The reverse polarity option allows the case to serve as the cathode terminal, which may simplify grounding schemes in specific chassis designs. Consider the thermal resistance characteristics and the need for adequate heat sinking to maintain operation within the specified temperature limits.
This component belongs to the 1N3305 through 1N3350B series of 50 Watt Zener diodes manufactured by Microchip Technology's Scottsdale Division. The series covers a broad voltage range from 3.9 V to 200 V. These devices are designed for robust performance in demanding environments and are available in various qualification levels including standard, JAN, JANTX, and JANTXV.
Equivalent parts include the 1N3311B for standard polarity configurations. For radiation-hardened requirements, verify availability of JAN or JANTX qualified versions such as JANTX1N3311B.