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The JANTX1N3312B is a high-power 50 W Zener diode manufactured by Microchip Technology. It provides voltage regulation with a nominal Zener voltage of 13 V and a maximum dynamic impedance of 1.1 Ohms at the test current of 960 mA. The device features a maximum reverse leakage current of 10 µA at 9.9 V and operates within a junction temperature range of -65°C to +175°C. It utilizes a DO-5 (DO-203AB) hexagonal stud package for base mounting.
Verify the specific JANTX qualification level against MIL-PRF-19500/358 requirements. Confirm polarity configuration, as standard units connect the anode to the case while reverse polarity requires an R suffix. Ensure thermal management meets the 50 W dissipation limit at case temperatures below 75°C. Check for any manufacturing change notices or packaging updates from the supplier.
Select this component when a 13 V reference with 50 W power handling is required. The B suffix indicates a tighter tolerance compared to A or un-suffixed variants. Consider the DO-5 stud mount for efficient heat transfer. Verify that the application environment supports the specified radiation hardness and ESD immunity levels defined in the datasheet.
This part belongs to the 1N3305 through 1N3350B series of 50 Watt Zener diodes produced by Microsemi's Scottsdale Division. The series covers a voltage range from 3.9 V to 200 V. The JANTX prefix denotes a specific screening level under the MIL-PRF-19500/358 specification, distinguishing it from standard commercial or other military grades.
Consult factory documentation for surface mount equivalents. Verify compatibility with existing thermal interfaces due to the hexagonal stud mounting requirement.