1N3312BE3

Overview

The Microchip Technology 1N3312BE3 is a high-power 50 W Zener diode from the 1N3305-1N3350B series. It provides voltage regulation with a nominal Zener voltage of 13 V and a tolerance of ±5%. The device operates within a junction and storage temperature range of -65°C to +175°C. It features a maximum DC Zener current of 3,300 mA and a typical dynamic impedance of 1.1 Ohms at the test current of 960 mA. The component utilizes a DO-5 (DO-203AB) package with a hexagonal stud for mounting.

Feature Summary

• Hermetically sealed welded metal and glass construction
• Internal solder bond design
• Standard polarity configuration with anode connected to case
• Radiation hard characteristics

Applications

• Voltage regulation in power supplies
• High power protection circuits
• Industrial control systems

Procurement Notes

Verify that the specific ordering suffix 'E3' aligns with the manufacturer's current documentation regarding material composition or environmental compliance. Confirm the exact part number against the official datasheet to ensure correct tolerance and polarity specifications are met for your application requirements.

Selection Notes

Select this component when a robust 50 W Zener diode with a 13 V breakdown voltage is required. Ensure the design accommodates the DO-5 stud mount package and adequate heat sinking to manage thermal dissipation effectively within the specified operating temperature range.

Part Context

This component belongs to the 1N3305 through 1N3350B series of high-power Zener diodes manufactured by Microchip Technology. These devices are designed for applications requiring broad voltage regulation capabilities up to 200 V. The series offers various tolerance options and military qualifications for demanding environments.

Replacement Considerations

Consult the manufacturer for surface mount equivalents or alternative part numbers if different packaging or mounting configurations are required.