SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Microchip Technology 1N3315B is a high-power 50 W Zener diode from the JEDEC registered 1N3305 through 1N3350B series. It provides voltage regulation with a nominal Zener voltage of 16.0 V at a test current of 780 mA. The device features a maximum dynamic impedance of 1.60 Ohms and a typical temperature coefficient of +0.070 %/°C. It operates within a junction and storage temperature range of -65°C to +175°C, utilizing a DO-5 (DO-203AB) package.
Verify the specific manufacturer origin as the datasheet references Microsemi Scottsdale Division while the brand input specifies Microchip Technology. Confirm that the DO-5 package dimensions and mounting hardware requirements align with your mechanical design constraints. Ensure adequate heat sinking is provided to maintain the stud temperature below 75°C for full 50 W power dissipation capability.
Select this component when a 16.0 V reference with high power handling is required. The B suffix indicates a standard 5% voltage tolerance. Consider the reverse polarity option by adding an R suffix if cathode-to-case connection is necessary. Evaluate the thermal resistance of 2.0°C/W maximum to ensure effective heat dissipation in the target application environment.
This part belongs to the 1N3305 through 1N3350B series of 50 Watt Zener diodes. These devices are designed for broad voltage regulation ranges from 3.9 V to 200 V. They offer military qualification options including JAN, JANTX, and JANTXV levels per MIL-PRF-19500/358 standards for specialized screening requirements.
Equivalent parts include the 1N4564B from the parallel 1N4549B through 1N4556B series which shares identical electrical specifications and physical form factor.