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The Microchip Technology 1N3315RA is a high-power 50 W Zener diode from the 1N3305–1N3350B series. It provides voltage regulation with a nominal Zener voltage of 16.0 V at a test current of 780 mA. The device features a maximum dynamic impedance of 1.60 Ohms and a reverse current of 10 µA. It operates within a junction temperature range of -65°C to +175°C and dissipates up to 50 watts at a case temperature below 75°C. The component utilizes a DO-5 (DO-203AB) package with an 11/16 inch hexagonal stud.
Verify the specific suffix 'R' confirms the reversed polarity configuration where the cathode connects to the case, distinct from standard anode-to-case units. Confirm the tolerance suffix matches the required voltage accuracy, as the base part number implies a specific manufacturing grade. Ensure mounting hardware specifications align with the 11/16 inch hexagonal stud dimensions for proper installation.
Select this component when high power dissipation capabilities are required alongside strict environmental resilience. The hermetic seal and radiation hardness make it appropriate for defense or space-oriented projects. Evaluate the thermal resistance of 2.0°C/W maximum to ensure adequate heat sinking is implemented for maintaining junction temperatures within safe operating limits during continuous operation.
This device belongs to the 1N3305 through 1N3350B series of 50 Watt Zener diodes manufactured by Microsemi's Scottsdale Division. The series covers a broad voltage range from 3.9 V to 200 V. These components are JEDEC registered and also available in JAN, JANTX, and JANTXV military qualifications per MIL-PRF-19500/358, offering various screening levels for critical applications.
Equivalent parts include other 50W Zener diodes in the DO-5 package with matching 16V ratings. Verify that substitute components meet the same radiation hardness requirements and hermetic sealing standards if used in qualified military or aerospace contexts.