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The Microchip Technology 1N3317RB is a high-power 50 W Zener diode belonging to the 1N3305 through 1N3350B series. It provides voltage regulation with a nominal Zener voltage of 18.0 V at a test current of 700 mA. The device features a maximum dynamic impedance of 2.00 Ohms and supports a maximum DC Zener current of 2,300 mA. It operates within a junction and storage temperature range of -65°C to +175°C. The component utilizes a DO-5 (DO-203AB) package with an 11/16 inch hexagonal stud.
Verify the specific revision level and manufacturing origin when sourcing this component. Confirm that the reverse polarity designation matches the intended circuit topology, as standard units feature an anode-to-case connection. Ensure mounting hardware specifications align with the hexagonal stud requirements for proper thermal dissipation and mechanical stability during installation.
Select this component for applications demanding high power dissipation capabilities up to 50 watts. Consider the thermal resistance characteristics and required heat sinking strategies to maintain junction temperatures within safe operating limits. Evaluate the need for military screening levels if the application involves extreme environmental conditions or strict reliability standards.
This part belongs to the 1N3305 through 1N3350B series of high-power Zener diodes manufactured by Microsemi, now part of Microchip Technology. The series covers a broad voltage range from 3.9 V to 200 V. These devices are designed for rugged environments and offer various tolerance options and qualification levels to meet diverse industrial and defense electronics requirements.
Direct replacements include other parts within the 1N3305–1N3350B series with matching voltage ratings. Equivalent components may be found among other manufacturers offering DO-5 packaged Zener diodes with similar power and voltage specifications. Verify electrical parameters and physical dimensions before substitution.