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The Microchip Technology 1N3325B is a high-power 50 W Zener diode from the JEDEC registered 1N3305 through 1N3350B series. It provides voltage regulation with a nominal Zener voltage of 33 V at a test current of 380 mA. The device features a maximum dynamic impedance of 3.2 Ohms and a reverse current of 10 µA at its rated voltage. It operates within a junction temperature range of -65°C to +175°C and utilizes a DO-5 (DO-203AB) package with an internal solder bond construction.
Verify the specific suffix requirements, as the 'B' suffix denotes a 5% tolerance while other suffixes indicate different tolerances or reversed polarity. Confirm that the procurement documentation explicitly references the Microsemi Scottsdale Division datasheet for the 1N3305–1N3350B series to ensure compliance with the correct electrical specifications and mechanical dimensions.
Select this component when a 50 W power dissipation capability is required in a stud-mount configuration. Ensure the application can accommodate the DO-5 package dimensions and the thermal management needs associated with maintaining the junction temperature below 175°C. Verify that the 33 V nominal voltage aligns with the circuit's regulation requirements and that the 3.2 Ohm dynamic impedance meets the signal stability criteria.
This part belongs to the 1N3305 through 1N3350B series of 50 Watt Zener diodes manufactured by Microsemi's Scottsdale Division. These devices are designed for high-power applications where reliable voltage regulation is critical. The series offers a broad range of voltages from 3.9 V to 200 V, providing engineers with standardized options for various power supply and protection designs across industrial and military sectors.
Direct replacements include other parts within the 1N3305–1N3350B series or the equivalent 1N4549B–1N4556B series. Military qualified versions such as JAN, JANTX, or JANTXV prefixes may be used if higher screening levels are required. Ensure any substitute maintains the same DO-5 package and 50 W power rating.