1N3326RB

Overview

The Microchip Technology 1N3326RB is a high-power 50 W Zener diode with a nominal voltage of 36 V and a dynamic impedance of 3.5 ohms at the test current of 350 mA. It features reversed polarity, indicated by the 'R' suffix, connecting the cathode to the case. The device operates within a junction temperature range of -65°C to +175°C and utilizes a hermetically sealed DO-5 (DO-203AB) metal and glass package.

Feature Summary

• Hermetically sealed welded construction for durability
• Internal solder bond design
• Reversed polarity configuration with cathode connected to the case
• Radiation hard characteristics

Applications

• Voltage regulation in military systems
• High power dissipation applications requiring heat sinking
• Circuits operating under extreme temperature conditions

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm polarity and tolerance requirements. Confirm that the required screening level matches the standard or military qualification available for this part number. Ensure mounting hardware specifications align with the hexagonal stud dimensions provided in the mechanical data sheet.

Selection Notes

Select this component when a 36 V breakdown voltage and 50 W power rating are required. The reversed polarity design is essential for applications where the case must serve as the cathode terminal. Verify thermal management capabilities to ensure the junction temperature remains within the specified maximum limits during operation.

Part Context

This device belongs to the 1N3305 through 1N3350B series of 50 Watt Zener diodes manufactured by Microchip Technology's Scottsdale Division. These components provide voltage regulation across a broad range from 3.9 V to 200 V. The series is designed for robust performance in demanding environments.

Replacement Considerations

Equivalent parts include JANTXV1N3326B and other variants within the 1N3305-1N3350B family sharing identical electrical characteristics and package dimensions.