1N3333RB

Overview

The Microchip Technology 1N3333RB is a high-power 50 W Zener diode belonging to the JEDEC registered 1N3305 through 1N3350B series. It provides voltage regulation with a nominal Zener voltage of 62.0 V at a test current of 200 mA. The device features a maximum dynamic impedance of 7.00 Ohms and a maximum reverse current of 10 µA. It operates within a junction temperature range of -65°C to +175°C and utilizes a DO-5 (DO-203AB) package with an internal solder bond construction.

Feature Summary

• Hermetically sealed welded metal and glass construction for durability
• Internal solder bond construction ensuring mechanical stability
• Reverse polarity configuration with cathode connected to the case
• Inherently radiation hard design suitable for harsh environments

Applications

• High power voltage regulation in industrial systems
• Protection circuits requiring robust thermal performance
• Military and aerospace applications utilizing radiation hardness

Procurement Notes

Verify the specific suffix requirements for your application, as the 'R' indicates reversed polarity and 'B' denotes a 5% tolerance. Confirm that the manufacturer documentation aligns with the requested part number before ordering. Ensure proper heat sinking is available to support the 50 W dissipation rating at the required operating temperatures.

Selection Notes

Select this component when a 62 V regulation point is required with high power handling capabilities. The DO-5 stud mount package facilitates efficient heat transfer to a chassis or heatsink. Consider the radiation hardness and hermetic sealing if the deployment environment involves extreme temperatures or potential exposure to ionizing radiation.

Part Context

This device is part of the broader 1N3305 through 1N3350B series of 50 Watt Zener diodes manufactured by Microsemi's Scottsdale Division. The series covers a wide voltage range from 3.9 V to 200 V, offering various tolerance options including A, B, C, and D suffixes. These components are designed for demanding applications where standard discrete diodes would fail due to thermal or environmental stress.

Replacement Considerations

Equivalent parts include the 1N4555B from the parallel 1N4549B through 1N4556B series. Military qualified versions such as JANTX1N3333B or JANTXV1N3333B provide higher screening levels while maintaining identical electrical characteristics.