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The Microchip Technology 1N3334RB is a high-power 50 W Zener diode with a nominal voltage of 56 V and a ±5% tolerance. It features a maximum dynamic impedance of 6.0 Ω at the test current of 220 mA, with a reverse leakage current of 10 µA at 52 V. The device operates within a junction temperature range of -65°C to +175°C and utilizes a DO-5 (DO-203AB) package with hexagonal stud mounting.
Verify that the specific part number includes the 'JANTXV' prefix if military screening per MIL-PRF-19500/358 is required, as standard JEDEC numbers lack this qualification. Confirm the 'R' suffix indicates the necessary reversed polarity (cathode to case). Ensure the procurement order specifies the correct tolerance suffix 'B' for ±5% accuracy. Contact the manufacturer directly for factory-specific packaging or additional screening requirements.
Select this component when a 56 V breakdown voltage with tight ±5% tolerance is required in a high-power environment. The DO-5 stud mount package facilitates direct heat sinking to chassis or cold plates. Verify that the application can accommodate the reversed polarity orientation where the cathode connects to the mounting base. Ensure adequate thermal management is provided to maintain the junction temperature below the maximum rating during operation.
This device belongs to the 1N3305 through 1N3350B series of 50 Watt Zener diodes manufactured by Microchip Technology's Scottsdale Division. The series covers a broad voltage range from 3.9 V to 200 V. These components are designed for demanding applications requiring high power dissipation and reliability, often utilized in defense and space electronics where hermetic sealing and radiation hardness are critical specifications.
Equivalent parts include the standard 1N3334B for non-military applications. For identical military screening and performance, verify availability of JANTX1N3334B or JANTXV1N3334B variants. Cross-reference with other manufacturers offering DO-5 packaged 56 V Zener diodes meeting MIL-PRF-19500/358 specifications.