SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Central Semiconductor Corp 1N3600 TR PBFREE is a silicon planar epitaxial diode designed for high-speed switching applications. It features a DO-35 through-hole package and operates with a peak reverse voltage of 50 V and a continuous forward current of 200 mA. The device supports a maximum surge current of 4 A and is characterized by ultra-fast switching speed, low capacitance, and miniature size.
Verify the specific suffix 'TR' indicates tape-and-reel packaging when sourcing. Confirm RoHS compliance status as 'PBFREE' implies lead-free construction but requires datasheet validation. Ensure the DO-35 through-hole footprint matches the target PCB layout requirements before finalizing procurement.
Select this component for applications requiring fast recovery in a standard axial leaded package. Compare the 50 V reverse voltage rating against circuit peak inverse voltage limits. Evaluate the 200 mA forward current capability against load requirements to ensure adequate thermal margin during operation.
This part belongs to the Central Semiconductor small-signal diode family. It utilizes silicon planar epitaxial technology. The device is distinct from transient voltage suppressors or MOSFETs offered by the same manufacturer, serving specifically as a general-purpose switching diode.
The 1N4150 is listed as a parametric equivalent in distributor documentation. Verify pinout compatibility and electrical parameter alignment before substitution.