SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Central Semiconductor Corp 1N4002SP TR is a standard recovery rectifier diode housed in the DO-41 through-hole package. It features a maximum repetitive reverse voltage of 100 V and an average forward rectified current rating of 1 A. The device exhibits a typical forward voltage drop of 1.1 V at rated current and a maximum reverse leakage current of 5 µA at 100 V. It supports a peak non-repetitive surge current of 30 A and has a typical reverse recovery time of 2 µs. The junction temperature range extends from -65°C to 175°C.
Verify the specific suffix configuration, as the TIN/LEAD variant may differ from other plating options. Confirm the active lifecycle status with the manufacturer prior to design finalization. Ensure the DO-41 footprint matches the target PCB layout requirements. Cross-reference datasheet electrical limits against the specific application stress conditions.
Select this component when a 100 V reverse voltage rating and 1 A continuous current capacity are required. The DO-41 package suits through-hole assembly processes. Consider the 175°C maximum junction temperature for high-thermal environments. Verify that the standard recovery characteristics align with the circuit switching frequency requirements.
This part belongs to the 1N400x series of silicon rectifier diodes, widely used in low-frequency power conversion. The 1N4002 variant specifically denotes the 100 V blocking capability within this family. Central Semiconductor manufactures these components using glass passivation techniques to ensure reliability in harsh operating conditions.
Direct parametric equivalents include the 1N4002SP TR TIN/LEAD from the same manufacturer. Other industry-standard 1N4002 devices in the DO-41 package may serve as functional substitutes if pinout and electrical ratings match.