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1N4103-1/TR is listed in the Single Zener Diodes range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ZENER 9.1V 500MW DO204AH. Review the specifications below when checking this part for your BOM.
The Microchip Technology 1N4103-1/TR is a 500 mW metallurgically bonded glass Zener diode in an axial-lead DO-35 package. It provides a nominal Zener voltage of 9.1 V with a standard tolerance of ±5%. The device operates within a junction and storage temperature range of -65 °C to +175 °C. Key electrical characteristics include a maximum Zener impedance of 0.5 Ω, a reverse current of 7.0 µA at 6.92 V, and a maximum noise density of 40 µV/√Hz.
Verify the specific reliability level (JAN, JANTX, JANTXV, or JANS) required for your application, as these levels are available but distinct. Confirm RoHS compliance status if environmental regulations apply, noting that RoHS versions are typically commercial grade only. Ensure the tape and reel packaging option aligns with automated assembly requirements.
Select this component when a robust, hermetically sealed Zener regulator is needed for harsh environments. The internal metallurgical bond offers superior mechanical stability compared to standard glass diodes. Consider the wide operating temperature range and radiation hardness for space or defense projects requiring high long-term reliability.
This part belongs to the 1N4099-1 through 1N4135-1 series of 500 mZener diodes. These devices share common construction features including the DO-35 package and metallurgical bonding. They are designed to meet stringent military specifications while providing a broad selection of voltage ratings from 1.8 V to 100 V.
Direct replacements must match the 9.1 V nominal voltage, 500 mW power rating, and DO-35 package. Verify that substitute parts also offer metallurgical bonding if high reliability is critical. Check for equivalent MIL-PRF-19500/435 qualification levels to ensure compatibility with existing design margins.
The '-1' suffix indicates that the diode features an internal metallurgical bond, which enhances mechanical strength and reliability compared to non-bonded variants.
Yes, the device is inherently radiation hard as described in Microsemi MicroNote 050, making it suitable for space and high-radiation environments.
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