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1N4112-1/TR is listed in the Single Zener Diodes range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ZENER 18V 500MW DO204AH. Review the specifications below when checking this part for your BOM.
The Microchip Technology 1N4112-1/TR is a 500 mW metallurgically bonded glass Zener diode in the axial-lead DO-35 (DO-204AH) package. It provides a nominal Zener voltage of 18 V with a standard tolerance of ±5%. The device operates within a junction temperature range of -65 °C to +175 °C and features a maximum reverse current of 13.7 µA at 27.4 V. Electrical characteristics include a test current of 250 µA, dynamic impedance of 0.05 Ω, and a positive temperature coefficient of +0.090 %/°C.
Verify that the specific procurement order includes the 'TR' suffix to ensure delivery in tape and reel packaging as specified by the part number. Confirm the required reliability qualification level (JAN, JANTX, JANTXV, or JANS) matches the application requirements, as these levels dictate the manufacturing and testing standards applied to the component.
Select this component when a stable 18 V reference is required in harsh environments. The positive temperature coefficient ensures predictable voltage shifts with heat. Ensure the circuit design accommodates the 500 mW power dissipation limit and linear derating above 50 °C lead temperature. Verify compatibility with through-hole assembly processes given the axial-lead configuration.
This part belongs to the 1N4099-1 through 1N4135-1 series of 500 mW Zener diodes manufactured by Microchip Technology. These devices are JEDEC registered and designed for demanding applications requiring robust voltage regulation. The series offers a wide range of voltages from 1.8 V to 100 V with various tolerance options.
Direct substitutes include other 18 V Zener diodes in the DO-35 package with matching 500 mW power ratings and similar electrical characteristics. Verify that any replacement meets the same MIL-PRF-19500/435 qualification levels if radiation hardness or extreme reliability is required.
The 1N4112-1 has a positive temperature coefficient of +0.090 %/°C.
Yes, the device is inherently radiation hard as described in Microsemi MicroNote 050.
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