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1N4112 (DO35) is listed in the Single Zener Diodes range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is DIODE ZENER 18V 400MW DO204AH. Review the specifications below when checking this part for your BOM.
The Microsemi 1N4112 is a silicon Zener diode with an 18V nominal voltage and 5% tolerance. It operates in the DO-35 (DO-204AH) glass axial-lead package, rated for 0.5W power dissipation at 25°C lead temperature. The device features an internal metallurgical bond and hermetic sealing. Electrical characteristics include a test current of 250µA, maximum impedance of 100Ω, reverse current of 13.7µA, noise density of 40µV/√Hz, and a temperature coefficient of +0.090%/°C.
Verify the specific suffixes to confirm the required reliability level (JAN, JANTX, JANTXV, or JANS) and RoHS compliance status. Ensure the metallurgically bonded variant is selected if specified by the design requirements. Confirm that the ordering information matches the exact JEDEC type number and tolerance class needed for the application.
Select this component when a stable 18V reference is required in a through-hole glass package. Consider the positive temperature coefficient for thermal stability analysis. Evaluate the low noise specification against circuit sensitivity requirements. Verify that the operating environment falls within the -65°C to +175°C junction temperature range.
This part belongs to the 1N4099-1 through 1N4135-1 series of 500mW Zener regulators. These devices are designed for high-reliability environments and offer tight voltage tolerances. The series provides extensive selection from 1.8V to 100V in standard axial-lead packages suitable for demanding industrial and aerospace applications.
Equivalent parts must match the 18V Zener voltage, 5% tolerance, and DO-35 package dimensions. Verify that any substitute also offers hermetic sealing and comparable noise density specifications to maintain circuit performance integrity.
The maximum temperature coefficient of regulator voltage is +0.090%/°C.
Yes, the device is inherently radiation hard as described in Microsemi MicroNote 050.
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