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1N4120/TR is listed in the Single Zener Diodes range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ZENER 30V 500MW DO7. Review the specifications below when checking this part for your BOM.
The Microchip Technology 1N4120/TR is a 500 mW metallurgically bonded glass Zener diode in the axial-lead DO-35 (DO-204AH) package. It provides a nominal Zener voltage of 30 V with a standard tolerance of ±5%. The device operates at a test current of 250 µA, featuring a maximum dynamic impedance of 0.01 Ω and a maximum reverse leakage current of 40 µA. It supports a junction temperature range from -65 °C to +175 °C.
Verify that the specific order includes the TR suffix to confirm tape-and-reel packaging rather than bulk supply. Confirm the required reliability level (JAN, JANTX, JANTXV, or JANS) matches the project specifications, as these designations dictate the manufacturing lot qualification and testing rigor. Ensure the component meets the necessary environmental compliance requirements for the intended deployment region.
Select this component when a stable 30 V reference is required within a through-hole axial lead form factor. The low dynamic impedance makes it suitable for applications demanding minimal signal variation under load changes. Consider the thermal derating curve if operating near the upper temperature limits, as power dissipation decreases linearly above 50 °C.
This part belongs to the 1N4099-1 through 1N4135-1 series of 500 mW Zener diodes manufactured by Microchip Technology. These devices are JEDEC registered and designed for robust performance in harsh environments. The series offers a wide selection of voltages from 1.8 V to 100 V, all sharing the same hermetically sealed glass package and metallurgical bonding technology.
Direct substitutes include other 1N4120 variants from different manufacturers that meet the same electrical specifications and package dimensions. For radiation-hardened applications, ensure the replacement maintains the JANS qualification level. Verify that any alternative device supports the required 500 mW power dissipation and operates within the specified -65 °C to +175 °C temperature range.
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