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1N4154_T50R
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Product Detailed Parameters
- Description：DIODE STANDARD 35V 100MA DO35
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：35 V
- Current - Average Rectified (Io)：100mA
- Voltage - Forward (Vf) (Max) @ If：1 V @ 30 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：4 ns
- Current - Reverse Leakage @ Vr：100 nA @ 25 V
- Capacitance @ Vr, F：4pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：DO-204AH, DO-35, Axial
- Supplier Device Package：DO-35
- Operating Temperature - Junction：175°C (Max)
- Grade：-
- Qualification：-
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Overview
The onsemi 1N4154_T50R is a high conductance fast diode housed in a DO-35 miniature glass axial leaded package. It features a working inverse voltage of 35 V and an average rectified current of 100 mA. The device supports a DC forward current of 300 mA and a peak forward surge current of up to 4.0 A for microsecond pulses. Electrical characteristics include a maximum reverse leakage current of 100 nA at 25°C, a forward voltage of 1.0 V at 30 mA, and a typical capacitance of less than 1.0 pF. Reverse recovery time is specified at 4.0 ns.
Feature Summary
- High forward conductance combined with fast switching speed for efficient signal processing.
- Miniature glass axial leaded package designed for general-purpose applications.
- Low typical capacitance suitable for high-frequency circuit environments.
Applications
- General purpose rectification circuits
- High-speed switching applications
- Computer logic interface diodes
Procurement Notes
Verify the authenticity of the component through authorized distribution channels to ensure compliance with Fairchild Semiconductor quality standards. Confirm that the ordering suffix matches the specific reel or tape configuration required for your assembly process. Review the datasheet revision history to ensure alignment with current electrical specifications before finalizing procurement orders.
Selection Notes
Select this component when low capacitance and rapid recovery are critical for circuit performance. The DO-35 package offers a compact footprint suitable for space-constrained designs. Ensure the operating junction temperature remains within the specified 175 °C limit during high-power dissipation scenarios.
Part Context
This part belongs to the 1N4154 series of silicon epitaxial planar diodes manufactured by Fairchild Semiconductor, now part of onsemi. The series is characterized by high breakdown voltage and high forward conductance, making it a standard choice for replacing older germanium diodes in modern electronic designs requiring improved thermal stability.
Replacement Considerations
Direct replacements include the 1N914 and 1N4148 series diodes. Verify that substitute components meet the same peak reverse voltage and reverse recovery time requirements to maintain circuit integrity without modification.
FAQ
What is the maximum peak forward surge current rating?
The device can withstand a peak forward surge current of 4.0 A for a pulse width of 1.0 microsecond.
How does the packaging denote polarity?
The cathode end is identified by a color band printed on the glass body of the DO-35 package.
