1N4154TR_S00Z

1N4154TR_S00Z

$0.01
  • Description:DIODE STANDARD 35V 100MA DO35
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)

SKU:8ed6489dd699 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:DIODE STANDARD 35V 100MA DO35
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):35 V
  • Current - Average Rectified (Io):100mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 30 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):4 ns
  • Current - Reverse Leakage @ Vr:100 nA @ 25 V
  • Capacitance @ Vr, F:4pF @ 0V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:DO-204AH, DO-35, Axial
  • Supplier Device Package:DO-35
  • Operating Temperature - Junction:175°C (Max)
  • Grade:-
  • Qualification:-

Download product information

1N4154TR_S00Z

Overview

The onsemi 1N4154TR_S00Z is a high conductance fast switching diode housed in a DO-35 glass axial package. It features a working inverse voltage of 35 V and an average rectified current rating of 100 mA. The device supports a DC forward current of 300 mA and a peak forward surge current up to 4.0 A for microsecond pulses. Electrical characteristics include a maximum reverse leakage current of 100 nA at 25 V, a typical capacitance under 1.0 pF, and a reverse recovery time of 4.0 ns.

Feature Summary

  • High forward conductance combined with fast switching speed for efficient signal processing.
  • Miniature glass axial leaded package designed for general-purpose applications.
  • Capacitance maintained below 1.0 picofarad to minimize parasitic effects.

Applications

  • General purpose rectification circuits
  • Computer logic interface diodes
  • High-speed switching applications

Procurement Notes

Verify the manufacturer origin carefully as this component was originally produced by Fairchild Semiconductor, which has undergone corporate restructuring. Ensure the specific suffix matches your supply chain requirements. Confirm RoHS compliance status directly with the supplier or authorized distributor before procurement to ensure adherence to environmental regulations.

Selection Notes

Select this component when a miniature glass axial package is required alongside low capacitance and rapid recovery times. It serves as a suitable alternative for standard small-signal switching tasks where high forward conductance is beneficial. Evaluate thermal derating factors if operating near the maximum junction temperature limits specified in the datasheet.

Part Context

This part belongs to the 1N4154 series of silicon epitaxial planar diodes. Originally manufactured by Fairchild Semiconductor, these devices are characterized by their high breakdown voltage and fast switching capabilities. The series is widely recognized for use in computer and logic circuits requiring reliable performance in a compact form factor.

Replacement Considerations

Compatible substitutes include the Vishay 1N4154 and Microchip 1N4154/TR. Verify that replacement parts match the DO-35 package dimensions and meet the same electrical thresholds for reverse voltage and forward current.

FAQ

What is the typical capacitance value of the 1N4154?

The typical capacitance is less than 1.0 picofarad at zero bias and 1.0 MHz frequency.

What is the maximum peak forward surge current?

The device can withstand a peak forward surge current of 4.0 A for a pulse width of 1.0 microsecond.

1N4154TR_S00Z1N4154TR_S00Z
$0.01
Buy Now