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The Microsemi Corporation 1N4437_FT is a silicon bridge rectifier diode designed for single-phase applications. It features four internal elements configured as a bridge, with a maximum repetitive peak reverse voltage of 400V and a maximum output current of 10A. The device supports a non-repetitive peak forward current of 100A and operates within a temperature range of -65°C to 160°C. It utilizes a press-fit package form factor.
Verify the specific suffix designation against official Microsemi documentation to confirm exact electrical tolerances and screening levels. Ensure the procurement specification matches the required press-fit termination style and hermetic sealing requirements if applicable to the target system design constraints.
Select this component when a 10A continuous current rating and 400V blocking voltage are required in a press-fit package. Consider the 160°C maximum junction temperature limit for high-thermal applications. Verify that the 100A surge current capacity meets the circuit's transient protection needs during startup or fault conditions.
This part belongs to the Microsemi bridge rectifier series, which provides solutions for various voltage and current ratings. The 1N4437_FT variant specifically addresses applications needing a 400V rating with a 10A average forward current capability in a durable metal or unspecified package form suitable for panel mounting.
Consult Microsemi datasheets for direct equivalents such as the 1N4437FS for hermetically sealed versions. Cross-reference with other manufacturers' 10A 400V bridge rectifiers only if pinout and thermal characteristics match precisely.