1N4446

Overview

The onsemi 1N4446 is a small signal diode housed in the DO-35 package. It features a maximum repetitive reverse voltage of 100 V and an average rectified forward current rating of 200 mA. The device supports a non-repetitive peak forward surge current of up to 4.0 A for microsecond pulses. Electrical characteristics include a maximum forward voltage of 1.0 V at 20 mA, a reverse recovery time of 4 ns, and a total capacitance of 4 pF. Thermal limits specify a power dissipation of 500 mW and a junction-to-ambient thermal resistance of 300 °C/W.

Feature Summary

• High-speed switching capability with a 4 ns reverse recovery time
• Robust surge handling with a 4.0 A peak forward current rating
• Low leakage current performance under elevated temperatures

Applications

• General-purpose rectification
• Signal switching circuits
• Clamping applications

Procurement Notes

Verify the manufacturer designation carefully, as this component was originally produced by Fairchild Semiconductor. Confirm that the specific revision or lot markings align with your supply chain requirements. Ensure the DO-35 axial leaded package matches your board layout constraints before finalizing procurement orders.

Selection Notes

Select this component when a fast-switching silicon diode is required within a standard through-hole form factor. The 100 V reverse voltage rating suits low-voltage logic and signal processing environments. Consider the 4 ns recovery time for high-frequency applications where minimal charge storage effects are necessary.

Part Context

This part belongs to the family of general-purpose small signal diodes designed for efficient switching operations. The DO-35 glass encapsulation provides electrical isolation and thermal stability. These devices are commonly utilized in consumer electronics and industrial control systems requiring reliable signal directionality.

Replacement Considerations

The 1N914 is a documented substitute offering similar 100 V ratings and 4 ns recovery characteristics.