1N4446TR

1N4446TR

  • Description:DIODE STANDARD 100V 200MA DO35
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)

SKU:0eda0f6376d8 Category: Brand:

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Product Detailed Parameters

  • Description:DIODE STANDARD 100V 200MA DO35
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io):200mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 20 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):4 ns
  • Current - Reverse Leakage @ Vr:25 nA @ 20 V
  • Capacitance @ Vr, F:4pF @ 0V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:DO-204AH, DO-35, Axial
  • Supplier Device Package:DO-35
  • Operating Temperature - Junction:175°C (Max)
  • Grade:-
  • Qualification:-

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1N4446TR

Overview

The onsemi 1N4446TR is a small signal switching diode housed in the DO-35 axial leaded package. It features a maximum repetitive reverse voltage of 100 V and an average rectified forward current rating of 200 mA. The device supports a non-repetitive peak forward surge current of up to 4.0 A for microsecond pulses. Electrical characteristics include a maximum forward voltage of 1.0 V at 20 mA, a reverse recovery time of 4 ns, and a total capacitance of 4 pF. Operating junction temperature reaches 175 °C with a storage range from -65 °C to +200 °C.

Feature Summary

  • Fast switching capability with a 4 ns reverse recovery time
  • High thermal stability supporting operation up to 175 °C junction temperature
  • Robust surge handling with 4.0 A peak forward current support

Applications

  • General purpose high-speed switching circuits
  • Clamping and protection applications
  • Detector circuits requiring low capacitance

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm the specific revision level matches design requirements. Check for RoHS compliance status as indicated in official documentation. Ensure the DO-35 package dimensions align with PCB layout constraints. Validate that the 1N4446TR designation corresponds to the correct electrical specifications for the intended application environment.

Selection Notes

Select this component when fast switching speed and low capacitance are critical. The 100 V reverse voltage rating suits moderate voltage applications. The DO-35 package provides reliable through-hole mounting. Consider the 4 ns recovery time for high-frequency signal processing. Evaluate thermal resistance requirements against ambient operating conditions.

Part Context

This part belongs to the standard small signal diode category manufactured by onsemi. It utilizes silicon planar technology within a glass passivated DO-35 case. The product line serves general electronic equipment requiring reliable switching performance. Manufacturing follows established semiconductor processes for consistency.

Replacement Considerations

Public confirmed substitute: 1N914.

1N4446TR1N4446TR

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