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1N4447TR
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Product Detailed Parameters
- Description：DIODE STANDARD 100V DO35
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io)：-
- Voltage - Forward (Vf) (Max) @ If：-
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：-
- Capacitance @ Vr, F：-
- Mounting Type：Through Hole
- Package / Case：DO-204AH, DO-35, Axial
- Supplier Device Package：DO-35
- Operating Temperature - Junction：175°C (Max)
- Grade：-
- Qualification：-
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Overview
The onsemi 1N4447TR is a small signal switching diode housed in the DO-35 axial through-hole package. It features a peak reverse voltage of 100 V and a maximum forward current of 200 mA. The device exhibits a fast recovery time of 4 ns, enabling high-speed switching applications. Key electrical parameters include a forward voltage of 1 V at rated current, a reverse leakage current of 25 nA, and a power dissipation rating of 500 mW. It operates within a temperature range of -65 °C to +175 °C.
Feature Summary
- Fast switching capability with a 4 ns reverse recovery time for high-speed circuit applications
- High thermal stability supporting operation up to +175 °C junction temperature
- Robust mechanical construction in a glass-encapsulated DO-35 axial leaded package
Applications
- General purpose rectification in low-power circuits
- High-speed switching in digital logic interfaces
- Signal detection and clamping in communication equipment
Procurement Notes
Verify the specific suffix 'TR' against official onsemi documentation to confirm tape-and-reel packaging availability, as standard datasheets often list bulk packaging. Confirm RoHS compliance status and REACH SVHC declarations directly from the manufacturer's latest product change notification or environmental data sheet prior to procurement.
Selection Notes
Select this component when a 100 V blocking voltage and 200 mA continuous forward current are required in an axial package. The 4 ns recovery time distinguishes it from slower general-purpose rectifiers. Ensure the application environment supports the specified operating temperature range and that the 500 mW power dissipation limit is not exceeded under worst-case thermal conditions.
Part Context
The 1N4447 is part of the widely recognized 1N444x series of silicon planar switching diodes. Manufactured by onsemi, this component utilizes diffused silicon planar technology for reliability. It serves as a standard replacement for legacy switching diodes in various electronic designs requiring fast response times and moderate voltage ratings.
Replacement Considerations
Cross-reference with other manufacturers' 1N4447 equivalents such as those from Microchip or ROHM. Verify pinout compatibility and ensure that alternative packages meet the same DO-35 mechanical constraints and electrical specifications.
