1N4448_T50A

1N4448_T50A

$0.01
  • Description:DIODE STANDARD 100V 200MA DO35
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Box (TB)

SKU:73bac99af91c Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE STANDARD 100V 200MA DO35
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Box (TB)
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io):200mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):4 ns
  • Current - Reverse Leakage @ Vr:5 µA @ 75 V
  • Capacitance @ Vr, F:2pF @ 0V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:DO-204AH, DO-35, Axial
  • Supplier Device Package:DO-35
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

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1N4448_T50A

Overview

The onsemi 1N4448_T50A is a small signal switching diode housed in the DO-204AH (DO-35) axial lead package. It features a maximum repetitive reverse voltage of 100 V and an average rectified forward current of 200 mA. The device exhibits a typical reverse recovery time of 4.0 ns, ensuring fast switching performance. Electrical characteristics include a forward voltage of up to 0.72 V at 5.0 mA and a total capacitance of 2.0 pF at 0 V and 1.0 MHz. The component operates within a junction temperature range of -55°C to +175°C.

Feature Summary

  • Fast switching capability with a 4.0 ns reverse recovery time
  • High breakdown voltage rating of 100 V
  • Low parasitic capacitance for high-frequency applications
  • Robust thermal stability across extended operating temperatures

Applications

  • High-speed electronic switching circuits
  • Clamping and protection stages
  • Pulse generation and shaping networks
  • General-purpose rectification in low-power systems

Procurement Notes

Verify that the ordering suffix T50A corresponds to the specified Ammo packing method as defined in the official datasheet. Confirm the package designation matches the DO-204AH (DO-35) form factor required for your assembly process. Ensure compliance with RoHS directives by checking the specific material composition documentation provided by the manufacturer before finalizing procurement.

Selection Notes

Select this component when a fast-recovery silicon diode is required for low-current applications. The 1N4448 variant offers lower capacitance compared to standard general-purpose diodes, making it suitable for higher frequency operations. Evaluate the 200 mA average current limit against peak load requirements to ensure adequate reliability margins under continuous operation conditions.

Part Context

This part belongs to the 1N91x and 1N4x48 family of small signal diodes manufactured by onsemi. The series includes variants such as the 1N4148 and 1N914, which share similar electrical profiles but may differ in specific breakdown voltage tolerances or packaging options. The T50A suffix specifically denotes the bulk ammo pack configuration for the DO-35 axial lead package.

Replacement Considerations

Direct substitutes within the same family include the 1N4148 and 1N914. Verify that alternative parts maintain the 100 V reverse voltage rating and comparable 4 ns recovery times to ensure circuit compatibility without redesigning surrounding components.

1N4448_T50A1N4448_T50A
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