1N4448HWS-7-G

Overview

The 1N4448HWS-7-G is a surface-mount fast switching diode manufactured by Diodes Incorporated. It features an 80 V maximum repetitive peak reverse voltage and a 250 mA average forward rectified current. The device exhibits a low reverse recovery time of 4 ns and a typical junction capacitance of 3.5 pF at 0 V. Forward voltage is specified at 1.25 V with a reverse leakage current of 100 nA. It operates within a junction temperature range of -65°C to +150°C and utilizes the SOD-323 package.

Feature Summary

• Fast switching speed with 4 ns reverse recovery time
• Small surface mount SOD-323 package design
• Low reverse leakage current for efficiency
• High conductance characteristics

Applications

• General purpose switching applications
• Battery powered portable devices
• High frequency signal processing circuits

Procurement Notes

Verify the specific suffix 'G' against official Diodes Incorporated documentation, as standard listings typically utilize suffixes such as '-7-F'. Confirm RoHS compliance status and AEC-Q101 qualification requirements directly with the manufacturer datasheet before procurement to ensure alignment with project specifications.

Selection Notes

Select this component for designs requiring compact surface-mount solutions with fast switching capabilities. Ensure the 80 V reverse voltage rating exceeds circuit peak voltages and the 250 mA current capacity meets load requirements. Verify thermal management needs given the 150°C maximum junction temperature limit.

Part Context

This part belongs to the 1N4448 series of silicon planar switching diodes. It serves as a surface-mount alternative to through-hole variants like the DO-35 packaged 1N4448. The HWS designation indicates high-speed performance optimized for modern electronic assemblies requiring reduced footprint and improved switching speeds.

Replacement Considerations

Public confirmed substitute part numbers include 1N4448HWS-7-F and 1N4448HWS-13-F from Diodes Incorporated.