1N4448HWS-7-G

Description：DIODE GEN PURP 80V 250MA SOD323
Series：*
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:bf191effc9b1 Category: Single Diodes Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

1N4448HWS-7-G is listed in the Single Diodes range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is DIODE GEN PURP 80V 250MA SOD323. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for 1N4448HWS-7-G

Description：DIODE GEN PURP 80V 250MA SOD323
Series：*
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：-
Voltage - DC Reverse (Vr) (Max)：-
Current - Average Rectified (Io)：-
Voltage - Forward (Vf) (Max) @ If：-
Speed：-
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：-
Capacitance @ Vr, F：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Operating Temperature - Junction：-
Grade：-
Qualification：-

Single Diodes datasheet and documents for 1N4448HWS-7-G

1N4448HWS-7-G

Single Diodes Overview

The 1N4448HWS-7-G is a surface-mount fast switching diode manufactured by Diodes Incorporated. It features an 80 V maximum repetitive peak reverse voltage and a 250 mA average forward rectified current. The device exhibits a low reverse recovery time of 4 ns and a typical junction capacitance of 3.5 pF at 0 V. Forward voltage is specified at 1.25 V with a reverse leakage current of 100 nA. It operates within a junction temperature range of -65°C to +150°C and utilizes the SOD-323 package.

Single Diodes Feature Summary

Fast switching speed with 4 ns reverse recovery time
Small surface mount SOD-323 package design
Low reverse leakage current for efficiency
High conductance characteristics

Single Diodes Applications

General purpose switching applications
Battery powered portable devices
High frequency signal processing circuits

Single Diodes Procurement Notes

Verify the specific suffix 'G' against official Diodes Incorporated documentation, as standard listings typically utilize suffixes such as '-7-F'. Confirm RoHS compliance status and AEC-Q101 qualification requirements directly with the manufacturer datasheet before procurement to ensure alignment with project specifications.

Single Diodes Selection Notes

Select this component for designs requiring compact surface-mount solutions with fast switching capabilities. Ensure the 80 V reverse voltage rating exceeds circuit peak voltages and the 250 mA current capacity meets load requirements. Verify thermal management needs given the 150°C maximum junction temperature limit.

Single Diodes Part Context

This part belongs to the 1N4448 series of silicon planar switching diodes. It serves as a surface-mount alternative to through-hole variants like the DO-35 packaged 1N4448. The HWS designation indicates high-speed performance optimized for modern electronic assemblies requiring reduced footprint and improved switching speeds.