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1N4531,133
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Product Detailed Parameters
- Description：DIODE STANDARD 75V 200MA DO34
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Cut Tape (CT),Tape & Box (TB)
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：75 V
- Current - Average Rectified (Io)：200mA
- Voltage - Forward (Vf) (Max) @ If：1 V @ 10 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：4 ns
- Current - Reverse Leakage @ Vr：25 nA @ 20 V
- Capacitance @ Vr, F：4pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：DO-204AG, DO-34, Axial
- Supplier Device Package：DO-34
- Operating Temperature - Junction：200°C (Max)
- Grade：-
- Qualification：-
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Overview
The Nexperia 1N4531,133 is a high-speed switching diode fabricated using planar technology and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages. It features a maximum continuous reverse voltage of 75 V and a repetitive peak forward current capability of 450 mA. The device exhibits a maximum reverse recovery time of 4 ns and a typical diode capacitance of 4 pF at 0 V and 1 MHz. With a junction temperature rating up to 200 °C, it supports reliable operation in demanding environments.
Feature Summary
- Hermetically sealed leaded glass package for environmental protection
- High switching speed with minimal reverse recovery time
- Planar technology construction for robust performance
Applications
- High-speed switching circuits
- Protection diodes in reed relays
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to ensure correct packaging configuration. Confirm RoHS compliance status and manufacturing origin details prior to procurement. Cross-reference the manufacturer part number with distributor listings to validate authenticity and traceability. Ensure storage conditions align with specified limits to maintain component integrity.
Selection Notes
Select this component for applications requiring fast switching speeds and hermetic sealing. Evaluate thermal resistance values relative to ambient operating temperatures. Consider the maximum non-repetitive peak forward current ratings for surge protection scenarios. Verify compatibility with existing circuit board layouts due to the axial DO-34 package dimensions.
Part Context
This discrete semiconductor belongs to the high-speed diode category within Nexperia's portfolio. It utilizes planar fabrication techniques to achieve rapid switching characteristics. The product line targets industrial and computing markets where reliability under stress is critical. Hermetic sealing distinguishes it from standard plastic-encapsulated alternatives.
Replacement Considerations
Consult official substitution guides for equivalent high-speed diodes. Verify pinout compatibility and package dimensions before implementation. Ensure electrical parameters such as reverse voltage and recovery time meet or exceed original requirements.
FAQ
What is the maximum reverse recovery time for the 1N4531?
The maximum reverse recovery time is 4 ns when switched from IF = 10 mA to IR = 60 mA.
Is the 1N4531 suitable for high-voltage applications?
It supports a maximum continuous reverse voltage of 75 V, making it suitable for low-to-medium voltage high-speed switching tasks.
