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1N4531,133 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is DIODE STANDARD 75V 200MA DO34. Review the specifications below when checking this part for your BOM.
The Nexperia 1N4531,133 is a high-speed switching diode fabricated using planar technology and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages. It features a maximum continuous reverse voltage of 75 V and a repetitive peak forward current capability of 450 mA. The device exhibits a maximum reverse recovery time of 4 ns and a typical diode capacitance of 4 pF at 0 V and 1 MHz. With a junction temperature rating up to 200 °C, it supports reliable operation in demanding environments.
Verify the specific ordering suffix against official Nexperia documentation to ensure correct packaging configuration. Confirm RoHS compliance status and manufacturing origin details prior to procurement. Cross-reference the manufacturer part number with distributor listings to validate authenticity and traceability. Ensure storage conditions align with specified limits to maintain component integrity.
Select this component for applications requiring fast switching speeds and hermetic sealing. Evaluate thermal resistance values relative to ambient operating temperatures. Consider the maximum non-repetitive peak forward current ratings for surge protection scenarios. Verify compatibility with existing circuit board layouts due to the axial DO-34 package dimensions.
This discrete semiconductor belongs to the high-speed diode category within Nexperia's portfolio. It utilizes planar fabrication techniques to achieve rapid switching characteristics. The product line targets industrial and computing markets where reliability under stress is critical. Hermetic sealing distinguishes it from standard plastic-encapsulated alternatives.
Consult official substitution guides for equivalent high-speed diodes. Verify pinout compatibility and package dimensions before implementation. Ensure electrical parameters such as reverse voltage and recovery time meet or exceed original requirements.
The maximum reverse recovery time is 4 ns when switched from IF = 10 mA to IR = 60 mA.
It supports a maximum continuous reverse voltage of 75 V, making it suitable for low-to-medium voltage high-speed switching tasks.
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