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1N4590R
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Product Detailed Parameters
- Description：DIODE STD REV 400V 150A DO205AA
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Technology：Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max)：400 V
- Current - Average Rectified (Io)：150A
- Voltage - Forward (Vf) (Max) @ If：1.5 V @ 150 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：9 mA @ 400 V
- Capacitance @ Vr, F：-
- Mounting Type：Chassis, Stud Mount
- Package / Case：DO-205AA, DO-8, Stud
- Supplier Device Package：DO-205AA (DO-8)
- Operating Temperature - Junction：-60°C ~ 200°C
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor 1N4590R is a silicon standard recovery rectifier housed in a DO-8 package. It features a repetitive peak reverse voltage of 400 V and a continuous forward current rating of 150 A. The device supports a non-repetitive surge current of 3000 A and exhibits a maximum junction-to-case thermal resistance of 0.35 °C/W. Operating temperatures range from -55 °C to +150 °C, with a storage temperature range of -55 °C to +150 °C.
Feature Summary
- High surge capability for handling transient overcurrent events
- Not sensitive to electrostatic discharge
- Standard polarity configuration with stud as cathode
Applications
- Industrial power conversion systems
- General purpose rectification in high-current circuits
- Power supply input stages
Procurement Notes
Verify the specific part marking against the datasheet terminal configuration table to confirm standard or reverse polarity orientation. Ensure the mounting surface preparation meets the thermal interface requirements for the specified junction-to-case thermal resistance. Confirm that the application environment stays within the stated operating temperature limits to maintain device reliability and performance specifications.
Selection Notes
Select this component when a 400 V blocking voltage and 150 A continuous current are required in a stud-mountable form factor. Consider the 0.35 °C/W thermal resistance for heatsink design calculations. Evaluate the 3000 A surge capability against potential inrush currents in the target circuit to ensure adequate safety margins during startup or fault conditions.
Part Context
This device belongs to the 1N4588(R) through 1N4593(R) series of silicon standard recovery diodes. All members share identical physical dimensions, thermal characteristics, and current ratings, differing only in their voltage blocking capabilities ranging from 200 V to 800 V. The DO-8 package provides a robust mechanical structure suitable for direct chassis or heatsink mounting in industrial environments.
Replacement Considerations
Direct substitutes include other 1N4590 variants from different manufacturers offering identical 400 V/150 A specifications in a DO-8 package. Verify pinout compatibility, specifically confirming the stud polarity matches the original design intent.
