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Product Detailed Parameters
- Description:DIODE STD 1200V 150A DO205AA
- Series:-
- Mfr:GeneSiC Semiconductor
- Package:Bulk
- Technology:Standard
- Voltage - DC Reverse (Vr) (Max):1200 V
- Current - Average Rectified (Io):150A
- Voltage - Forward (Vf) (Max) @ If:1.5 V @ 150 A
- Speed:Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):-
- Current - Reverse Leakage @ Vr:4 mA @ 1200 V
- Capacitance @ Vr, F:-
- Mounting Type:Chassis, Stud Mount
- Package / Case:DO-205AA, DO-8, Stud
- Supplier Device Package:DO-205AA (DO-8)
- Operating Temperature - Junction:-60°C ~ 200°C
- Grade:-
- Qualification:-
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Overview
The GeneSiC Semiconductor 1N4595 is a silicon standard recovery rectifier housed in a DO-8 stud mount package. It features a repetitive peak reverse voltage of 1200 V and a continuous forward current rating of 150 A at 25 °C case temperature. The device supports a non-repetitive surge current of 3000 A and an I2t fusing value of 37200 A²sec. Thermal resistance from junction to case is 0.35 °C/W, with a maximum operating temperature range of -55 °C to +150 °C.
Feature Summary
- High surge capability for robust transient handling
- Not ESD sensitive for simplified handling
- Standard polarity configuration with cathode stud
Applications
- Industrial power conversion systems
- High voltage DC power supplies
- Motor drive rectification circuits
Procurement Notes
Verify the specific suffix designation when ordering. The base part number indicates standard polarity where the stud functions as the cathode. Devices with an 'R' suffix feature reversed leads where the stud acts as the anode. Confirm thermal interface requirements match the specified junction-to-case thermal resistance for proper heat sinking implementation.
Selection Notes
Select this component for applications requiring high current capacity and high voltage blocking in a single-phase or bridge rectifier topology. Ensure the cooling system maintains the case temperature within limits to sustain the 150 A rating. Consider the 0.35 °C/W thermal resistance when designing the heatsink interface to prevent junction overheating during continuous operation.
Part Context
This device belongs to the 1N4594 through 1N4596 series of silicon standard recovery diodes. All variants share identical physical dimensions, thermal characteristics, and current ratings. The primary distinction across the series is the voltage rating, which ranges from 1000 V to 1400 V depending on the specific model number selected.
Replacement Considerations
Direct pin-compatible substitutes include the 1N4594 and 1N4596 models from the same manufacturer series. These alternatives maintain the same DO-8 package and electrical current specifications while differing only in their maximum reverse voltage ratings.
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