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Product Detailed Parameters
- Description:DIODE STD REV 1200V 150A DO205AA
- Series:-
- Mfr:GeneSiC Semiconductor
- Package:Bulk
- Technology:Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max):1200 V
- Current - Average Rectified (Io):150A
- Voltage - Forward (Vf) (Max) @ If:1.5 V @ 150 A
- Speed:Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):-
- Current - Reverse Leakage @ Vr:4 mA @ 1200 V
- Capacitance @ Vr, F:-
- Mounting Type:Chassis, Stud Mount
- Package / Case:DO-205AA, DO-8, Stud
- Supplier Device Package:DO-205AA (DO-8)
- Operating Temperature - Junction:-60°C ~ 200°C
- Grade:-
- Qualification:-
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Overview
The GeneSiC Semiconductor 1N4595R is a silicon standard recovery diode housed in a DO-8 package. It features a repetitive peak reverse voltage of 1200 V and a continuous forward current rating of 150 A at a case temperature of 25 °C. The device supports a surge non-repetitive forward current of 3000 A for half-sine wave pulses lasting 8.3 ms. Electrical characteristics include a maximum forward voltage of 1.5 V at 150 A and a thermal resistance from junction to case of 0.35 °C/W. The component operates within a junction temperature range of -55 °C to 150 °C.
Feature Summary
- High surge current capability designed for robust power applications
- DO-8 stud mount package configuration for efficient thermal management
- Standard polarity with cathode stud or reverse polarity variant with anode stud
Applications
- Industrial power conversion systems
- High-voltage rectification circuits
- Power supply units requiring high current handling
Procurement Notes
Verify the specific terminal configuration required for your design, as the datasheet distinguishes between standard polarity where the stud is the cathode and reverse polarity variants where the stud is the anode. Confirm that the selected part matches the exact voltage and current ratings needed for your thermal environment. Ensure mounting hardware is compatible with the 3/8-24 UNF threaded stud specification provided in the mechanical dimensions.
Selection Notes
Select this component when a 1200 V blocking voltage and 150 A continuous current are required in a stud-mount form factor. Consider the 0.35 °C/W thermal resistance for heat sink calculations. Evaluate whether the standard or reverse polarity configuration aligns with your circuit topology. The DO-8 package offers a balance of high current capacity and mechanical stability for industrial environments.
Part Context
This device belongs to the 1N4594(R) through 1N4596(R) series of silicon standard recovery diodes manufactured by GeneSiC Semiconductor. The series covers voltage ratings from 1000 V to 1400 V, all sharing identical current ratings and thermal characteristics. These components are designed for general-purpose high-power rectification tasks in demanding electrical systems.
Replacement Considerations
Direct substitutes within the same series include the 1N4594R (1000 V) and 1N4596R (1400 V), provided the voltage rating meets the circuit requirements. Verify that any replacement maintains the same DO-8 package and 150 A current rating to ensure mechanical and electrical compatibility.
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