1N4737E3/TR13

Overview

The Microchip Technology 1N4737E3/TR13 is a silicon Zener diode with a nominal voltage of 7.5 V and a 5% tolerance, housed in a plastic DO-41 axial package. It dissipates 1 W at 25°C and operates from -65°C to +150°C. The device features a test current of 34 mA, a maximum dynamic impedance of 4.0 Ω, and a maximum reverse current of 10 μA. It is supplied in tape and reel packaging.

Feature Summary

• Provides stable voltage regulation across a broad operating current and temperature range
• Features flexible axial-lead mounting terminals for standard through-hole applications
• Constructed with a void-free transfer molded thermosetting epoxy body

Applications

• Voltage regulation circuits
• Reference voltage sources
• Overvoltage protection

Procurement Notes

Verify the specific suffix configuration against official datasheets to confirm RoHS compliance and tape-and-reel packaging requirements. Ensure that the ordering details match the exact JEDEC registration and screening levels required for the intended application environment.

Selection Notes

Select this component when a 7.5 V reference with 5% tolerance is required in an axial leaded package. Consider the 1 W power dissipation limit and thermal derating curves for high-temperature environments. Verify compatibility with existing circuit board layouts designed for the DO-41 footprint.

Part Context

This part belongs to the 1N4728AP thru 1N4764AP series of 1.0 watt Zener diodes manufactured by Microsemi. The series offers extensive voltage selection from 3.3 to 100 volts in plastic encapsulated packages. These devices are JEDEC registered and available in RoHS compliant versions.

Replacement Considerations

Cross-reference with other manufacturers' 1N4737 equivalents. Verify that substitute parts meet the same 7.5 V nominal voltage, 5% tolerance, and 1 W power dissipation ratings.