1N4750A B0G

Overview

The Taiwan Semiconductor Corporation 1N4750A B0G is a single silicon Zener diode designed for voltage regulation applications. It features a nominal Zener voltage of 27 V with a tolerance of 5%. The device dissipates up to 1 W of power and operates within a temperature range of -65 °C to +150 °C. Packaged in the DO-41 axial leaded format, it exhibits a maximum reverse leakage current of 5 uA and a Zener impedance of 35 Ohms at a test current of 9.5 mA.

Feature Summary

• Glass passivated junction construction for enhanced stability
• Built-in strain relief mechanism for mechanical durability
• Low profile package design suitable for dense layouts
• High temperature soldering capability

Applications

• Voltage reference circuits
• Overvoltage protection systems
• General purpose rectification and clamping

Procurement Notes

Verify the specific suffix B0G against manufacturer documentation to confirm compliance details and packaging specifications. Ensure the component meets RoHS requirements if applicable to your project constraints. Cross-reference datasheet parameters such as thermal resistance and maximum ratings before finalizing procurement decisions.

Selection Notes

Select this component when a 27 V regulation point is required with 1 W power handling capabilities. The DO-41 through-hole package facilitates manual assembly or standard wave soldering processes. Consider the 5% voltage tolerance and 35 Ohm impedance characteristics for circuit precision requirements.

Part Context

This part belongs to the 1W glass passivated junction silicon Zener diode series from Taiwan Semiconductor. These devices are engineered for general-purpose voltage regulation tasks. The series offers various voltage options within the same standardized DO-41 package form factor.

Replacement Considerations

Compatible substitutes include the onsemi 1N4750A and Rectron 1N4750A-B, which share identical electrical ratings and DO-41 packaging.