1N4755A-TAP

Overview

The Vishay General Semiconductor - Diodes Division 1N4755A-TAP is a silicon planar power Zener diode housed in an axial DO-41 (DO-204AL) package. It provides a nominal Zener voltage of 43 V with a standard tolerance of ±5%. The device operates at a test current of 6 mA and features a maximum dynamic impedance of 70 Ohms. It dissipates up to 1.3 W of power, supports a surge current of 1500 mA, and maintains a maximum reverse leakage current of 5 µA at 32.7 V. The component functions within a junction temperature range of -65 °C to +175 °C.

Feature Summary

• Silicon planar construction designed for high-power stabilizing and clipping circuits
• Standardized Zener voltage tolerance of ±5% for consistent regulation performance
• Robust thermal handling capabilities supporting high power dissipation ratings

Applications

• Voltage stabilization
• Clipping circuits

Procurement Notes

Verify the specific ordering code suffix against official documentation to confirm packaging format. Confirm that the requested part matches the exact Vishay document number and revision level. Ensure compliance requirements align with project specifications before finalizing procurement orders.

Selection Notes

Select this component when a 43 V reference point is required in through-hole designs. Evaluate the 1.3 W power dissipation capability against expected thermal loads. Verify that the 70 Ohm dynamic impedance meets the circuit's noise and regulation sensitivity requirements.

Part Context

This part belongs to the 1N4728A to 1N4761A series of silicon planar power Zener diodes manufactured by Vishay Semiconductors. The series covers a broad range of nominal voltages from 3.3 V to 75 V. All devices share the same DO-41 glass case package and standardized electrical testing parameters defined in document 85816.

Replacement Considerations

Cross-reference other manufacturers' 1N4755A equivalents to ensure matching voltage tolerance and package dimensions. Verify that substitute components meet the same 1.3 W power dissipation rating and 175 °C maximum junction temperature limits.