1N4757A

Overview

The onsemi 1N4757A is a silicon planar Zener diode designed for voltage regulation applications. It features a nominal Zener voltage of 51 V with a tolerance of ±5%. The device is rated for a maximum power dissipation of 1.3 W and operates within a junction temperature range up to +175°C. Packaged in the DO-204AL (DO-41) axial leaded format, it exhibits a maximum Zener impedance of 95 Ohms at a test current of 5 mA. The component meets AEC-Q101 automotive qualification standards and complies with RoHS directives.

Feature Summary

• Automotive-grade reliability certified under AEC-Q101 standards
• High thermal stability supporting operation up to +175°C junction temperature
• Glass passivated junction construction for enhanced durability
• Low leakage current characteristics typical above 11 V

Applications

• Voltage reference circuits in automotive electronics
• Overvoltage protection stages
• General-purpose voltage regulation

Procurement Notes

Verify the specific manufacturer designation, as the 1N4757A part number is widely produced by multiple semiconductor vendors including Vishay and Taiwan Semiconductor. Confirm that the sourced component explicitly carries the onsemi branding or part marking to ensure compliance with the requested brand specification. Cross-reference the datasheet revision and electrical parameters against the official onsemi documentation to guarantee functional equivalence.

Selection Notes

Select this component when an automotive-qualified Zener diode with a 51 V breakdown voltage is required. Ensure the application circuit can handle the 1.3 W power dissipation rating and that the axial DO-41 package fits the board layout constraints. Verify that the 95 Ohm impedance value aligns with the noise and regulation requirements of the target design.

Part Context

The 1N4757A belongs to the standard JEDEC 1N47xx series of Zener diodes. While many manufacturers produce this generic part number, the onsemi variant specifically emphasizes automotive qualification and high-temperature performance. It serves as a direct replacement for other 1N4757A devices provided the power ratings and package types are compatible.

Replacement Considerations

Direct substitutes include the Vishay 1N4757A-TR and Taiwan Semiconductor 1N4757AHR1G. When replacing, verify that the alternative maintains the 1.3 W power rating and AEC-Q101 qualification if automotive use is intended.