1N4757A-TAP

Overview

The Vishay 1N4757A-TAP is a silicon planar power Zener diode in the DO-204AL (DO-41) axial through-hole package. It provides a nominal Zener voltage of 51 V with a standard tolerance of ±5%. The device dissipates up to 1.3 W at thermal equilibrium and operates within a junction temperature range of -65 °C to +175 °C. Electrical characteristics include a maximum dynamic impedance of 95 Ω, a reverse leakage current of 5 µA at 38.8 V, and a forward voltage of 1.2 V at 200 mA.

Feature Summary

• Designed for high-power stabilization and clipping applications
• Utilizes silicon planar technology for robust performance
• Features a standard Zener voltage tolerance of ±5%

Applications

• Voltage stabilization circuits
• Signal clipping circuits

Procurement Notes

Verify that the specific TAP suffix corresponds to the Ammo Pack packaging format containing 5000 units per pack. Confirm compliance with RoHS3 directives and AEC-Q101 automotive qualification requirements. Ensure the ordering code matches the manufacturer's official documentation for the 1N4757A series.

Selection Notes

Select this component when a 51 V regulation point is required in through-hole designs. The 1.3 W power rating supports higher energy dissipation compared to lower-wattage variants. Verify that the 95 Ω dynamic impedance meets the circuit's ripple rejection requirements.

Part Context

This part belongs to the Vishay 1N4728A through 1N4761A series of silicon planar power Zener diodes. These devices share the DO-41 axial leaded package and are engineered for general-purpose voltage regulation tasks requiring reliable thermal stability and consistent electrical parameters across wide operating temperatures.

Replacement Considerations

Cross-reference with other manufacturers' 1N4757A equivalents. Verify that substitute parts maintain identical 51 V nominal voltage, ±5% tolerance, and 1.3 W power dissipation capabilities within the DO-41 package form factor.