1N482B

Overview

The Microchip Technology 1N482B is a high conductance signal diode housed in a DO-35 glass package. It features a peak inverse voltage of 30 V and an average forward rectified current of 0.2 A at 25°C ambient temperature. The device exhibits a maximum forward voltage drop of 1.0 V at 0.1 A and a maximum leakage current of 0.025 µA at 25°C. It supports a junction temperature range from -65°C to +200°C with a maximum power dissipation of 250 mW.

Feature Summary

• Humidity proof glass construction
• Sigma Bond plated contacts
• Thermally matched system design

Applications

• General purpose diode in power supplies
• Clipping applications
• Steering applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type, such as bulk or tape and reel configurations. Confirm that the component meets all required environmental standards for the intended deployment environment before finalizing procurement orders.

Selection Notes

Select this component for circuits requiring robust performance in harsh environments due to its hermetic glass construction. It is suitable for designs utilizing ceramic boards and high-temperature IR solder reflow processes. Ensure the application operates within the specified 200°C junction temperature limit without derating requirements.

Part Context

This part belongs to the High Conductance DO-35 Diodes series, which includes variants ranging from 1N482B to 1N486B. These diodes are designed for general-purpose switching and rectification tasks. The series offers compatible LL-35 MiniMELF types for surface mount applications by substituting the prefix.

Replacement Considerations

LL-35 prefix variants are available as surface mount substitutes for the through-hole DO-35 package.