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1N483B_T50R
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Product Detailed Parameters
- Description：DIODE STANDARD 80V 200MA DO35
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：80 V
- Current - Average Rectified (Io)：200mA
- Voltage - Forward (Vf) (Max) @ If：1 V @ 100 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：25 nA @ 60 V
- Capacitance @ Vr, F：-
- Mounting Type：Through Hole
- Package / Case：DO-204AH, DO-35, Axial
- Supplier Device Package：DO-35
- Operating Temperature - Junction：175°C (Max)
- Grade：-
- Qualification：-
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Overview
The 1N483B_T50R is a silicon rectifier diode manufactured by onsemi. It features a maximum repetitive peak reverse voltage of 70 V and an average forward rectified current of 200 mA. The device has a power dissipation rating of 500 mW and operates within a junction temperature range from -65 °C to +175 °C. It utilizes a DO-35 axial leaded package for through-hole mounting.
Feature Summary
- Provides standard recovery rectification capabilities for signal or computer applications
- Features hermetically sealed glass encapsulation for environmental protection
- Supports high-temperature operation up to 175 °C junction temperature
Applications
- General purpose signal rectification
- Computer logic circuit interfacing
- Low-power DC-to-DC conversion stages
Procurement Notes
Verify the specific manufacturer designation, as the component may be sourced from Microchip Technology rather than onsemi depending on supply chain history. Confirm the package type matches the required DO-35 footprint. Ensure the reverse voltage rating of 70 V meets the circuit requirements. Check for any military qualification markings if reliability standards are critical. Validate the RoHS status against project specifications.
Selection Notes
Select this component when a low-capacitance, fast-recovery diode is needed for small-signal applications. The 70 V rating suits low-voltage logic systems. The 200 mA current capacity is sufficient for minimal load conditions. Consider the thermal resistance for PCB layout planning. Compare leakage current specifications against sensitive input stages.
Part Context
This part belongs to the general-purpose silicon rectifier family, often designated under MIL-PRF-19500/118N standards for specific grades. Similar parts include the 1N483A and 1N485B, which offer different voltage ratings within the same series. These devices are commonly used in legacy and modern electronics requiring reliable low-power switching.
Replacement Considerations
Direct substitutes include the 1N483A and 1N483B from other manufacturers with identical electrical characteristics. Verify pinout compatibility and package dimensions before substitution. Ensure the replacement diode meets the same temperature and current ratings.
