1N484B

1N484B

$2.89
  • Description:DIODE STD 125V 200MA DO204AH
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk

SKU:e202dee88dd4 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE STD 125V 200MA DO204AH
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):125 V
  • Current - Average Rectified (Io):200mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:25 nA @ 125 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Through Hole
  • Package / Case:DO-204AH, DO-35, Axial
  • Supplier Device Package:DO-204AH (DO-35)
  • Operating Temperature - Junction:-65°C ~ 200°C

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1N484B

Overview

The Microchip Technology 1N484B is a high conductance silicon signal diode housed in a DO-35 glass package. It features a peak inverse voltage of 125 V and an average forward rectified current of 0.2 A at 25°C ambient temperature. The device supports a junction temperature range from -65°C to +200°C with no derating required up to the maximum limit. Key electrical characteristics include a maximum forward voltage drop of 1.0 V at 0.1 A, a maximum leakage current of 25 µA at 150°C, and a minimum saturation voltage of 150 V.

Feature Summary

  • Humidity proof glass construction for environmental stability
  • Thermally matched system design ensuring consistent performance
  • Sigma Bond plated contacts providing reliable interconnects
  • Compatible with automatic pick and place mounting equipment

Applications

  • General purpose diode applications in power supplies
  • Signal clipping circuits
  • Current steering applications

Procurement Notes

Verify the specific manufacturer source documentation when sourcing this component, as specifications may vary between original equipment manufacturers and secondary suppliers. Confirm that the DO-35 glass package matches your thermal and mechanical requirements. Ensure the procurement channel provides traceability for the Sigma Bond contacts and solderability guarantees. Cross-reference the absolute maximum ratings against your circuit's surge and thermal conditions before finalizing orders.

Selection Notes

Select the 1N484B when a 125 V peak inverse voltage rating is required alongside a 0.2 A average forward current capability. This component is suitable for designs operating at temperatures up to 200°C without derating. Consider this part for harsh environments where hermeticity is critical. Verify compatibility with ceramic boards and high-temperature IR solder reflow processes if surface mount or automated assembly is planned.

Part Context

This component belongs to the 1N482B through 1N486B series of high conductance DO-35 diodes. The series shares identical physical dimensions and thermal characteristics, differing primarily in their peak inverse voltage ratings. The 1N484B occupies the middle tier of this voltage range, offering 125 V blocking capability while maintaining the standard 0.2 A current handling and low forward voltage drop typical of the family.

Replacement Considerations

LL-35 MiniMELF types are available as substitutes; replace the '1N' prefix with 'LL' to identify equivalent miniaturized versions.

1N484B1N484B
$2.89
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