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Product Detailed Parameters
- Description:DIODE STD 125V 200MA DO204AH
- Series:-
- Mfr:Microchip Technology
- Package:Bulk
- Technology:Standard
- Voltage - DC Reverse (Vr) (Max):125 V
- Current - Average Rectified (Io):200mA
- Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
- Speed:Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):-
- Current - Reverse Leakage @ Vr:25 nA @ 125 V
- Capacitance @ Vr, F:-
- Mounting Type:Through Hole
- Package / Case:DO-204AH, DO-35, Axial
- Supplier Device Package:DO-204AH (DO-35)
- Operating Temperature - Junction:-65°C ~ 200°C
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Overview
The Microchip Technology 1N484B is a high conductance silicon signal diode housed in a DO-35 glass package. It features a peak inverse voltage of 125 V and an average forward rectified current of 0.2 A at 25°C ambient temperature. The device supports a junction temperature range from -65°C to +200°C with no derating required up to the maximum limit. Key electrical characteristics include a maximum forward voltage drop of 1.0 V at 0.1 A, a maximum leakage current of 25 µA at 150°C, and a minimum saturation voltage of 150 V.
Feature Summary
- Humidity proof glass construction for environmental stability
- Thermally matched system design ensuring consistent performance
- Sigma Bond plated contacts providing reliable interconnects
- Compatible with automatic pick and place mounting equipment
Applications
- General purpose diode applications in power supplies
- Signal clipping circuits
- Current steering applications
Procurement Notes
Verify the specific manufacturer source documentation when sourcing this component, as specifications may vary between original equipment manufacturers and secondary suppliers. Confirm that the DO-35 glass package matches your thermal and mechanical requirements. Ensure the procurement channel provides traceability for the Sigma Bond contacts and solderability guarantees. Cross-reference the absolute maximum ratings against your circuit's surge and thermal conditions before finalizing orders.
Selection Notes
Select the 1N484B when a 125 V peak inverse voltage rating is required alongside a 0.2 A average forward current capability. This component is suitable for designs operating at temperatures up to 200°C without derating. Consider this part for harsh environments where hermeticity is critical. Verify compatibility with ceramic boards and high-temperature IR solder reflow processes if surface mount or automated assembly is planned.
Part Context
This component belongs to the 1N482B through 1N486B series of high conductance DO-35 diodes. The series shares identical physical dimensions and thermal characteristics, differing primarily in their peak inverse voltage ratings. The 1N484B occupies the middle tier of this voltage range, offering 125 V blocking capability while maintaining the standard 0.2 A current handling and low forward voltage drop typical of the family.
Replacement Considerations
LL-35 MiniMELF types are available as substitutes; replace the '1N' prefix with 'LL' to identify equivalent miniaturized versions.
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