1N4935GP

Overview

The onsemi 1N4935GP is a fast recovery rectifier diode housed in the DO-41 axial leaded package. It features a maximum average forward rectified current of 1 A and a repetitive peak reverse voltage of 200 V. The device exhibits a typical forward voltage drop of 1.2 V at rated current and a maximum reverse leakage current of 5 uA. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 30 A, a power dissipation rating of 2.5 W, and a reverse recovery time of 150 ns. The component operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

• Fast recovery switching capability for efficient high-frequency operation
• Glass passivated junction construction for enhanced environmental stability
• Metalurgically bonded design ensuring robust mechanical integrity

Applications

• High frequency rectification circuits
• Inverter freewheeling diodes
• DC-DC converter output rectification
• General purpose fast switching applications

Procurement Notes

Verify the specific suffix 'GP' against the manufacturer's official datasheet to confirm glass passivation status and exact marking codes. Confirm RoHS compliance details directly with onsemi documentation as regulatory status can vary by production batch. Ensure the DO-41 package dimensions match your PCB footprint requirements before finalizing procurement.

Selection Notes

Select this component when a 1 A current rating and 200 V blocking voltage are required in an axial through-hole package. The fast recovery characteristic makes it suitable for applications requiring lower switching losses compared to standard rectifiers. Verify that the thermal management strategy supports the specified power dissipation limits under worst-case operating conditions.

Part Context

This part belongs to the 1N493x series of fast recovery rectifiers from onsemi. The series offers various voltage ratings ranging from 50 V to 600 V while maintaining a consistent 1 A current capacity. The 1N4935 variant specifically targets the 200 V application segment within this family of silicon planar junction devices.

Replacement Considerations

Cross-reference with other manufacturers offering the 1N4935 specification in DO-41 packages. Ensure substitute parts meet the same 150 ns maximum reverse recovery time and 1.2 V forward voltage criteria. Verify pinout compatibility and thermal resistance values to maintain circuit performance.