ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：100V .22MA TH DIODE-CURRENT LIMI
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Voltage - Anode - Cathode (Vak)(Max)：100V
- Regulator Current (Max)：253µA
- Voltage - Limiting (Max)：1V
- Power - Max：600mW
- Applications：LED Driver
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：DO-204AH, DO-35, Axial
- Supplier Device Package：DO-35
- Grade：-
- Qualification：-
Download product information
Overview
The 1N5283 TR TIN/LEAD is a silicon current regulator diode manufactured by Central Semiconductor Corp. It provides a stable regulated current of 242 µA with a maximum limiting voltage of 1 V and a peak operating voltage of 100 V. The device features a minimum dynamic impedance of 25 mΩ and a knee impedance of 2.75 mΩ. Designed for through-hole mounting, it utilizes the DO-7 (DO-204AH) axial leaded package. The component operates within a temperature range of -55°C to +175°C and has a power dissipation rating of 500 mW.
Feature Summary
- Maintains constant current output across varying load conditions
- Operates reliably at high junction temperatures up to 175°C
- Utilizes low dynamic impedance for stable regulation performance
Applications
- Constant current sources for LED biasing
- Current limiting protection in electronic circuits
- Biasing elements for transistor amplifier stages
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm compliance with environmental directives such as RoHS or REACH. Ensure the tin/lead plating specification aligns with assembly process requirements. Confirm that the through-hole DO-7 package dimensions match the target PCB footprint design constraints.
Selection Notes
Select this component when a precise microampere-level current source is required without active feedback loops. Evaluate the thermal environment to ensure the 500 mW power dissipation limit is not exceeded. Verify that the 100 V peak operating voltage accommodates the maximum circuit potential differences during transient conditions.
Part Context
This part belongs to the standard 1N5283 series of silicon current regulator diodes. It serves as a passive alternative to active current mirror circuits, offering simplified design topology. The device is functionally equivalent to other manufacturers' 1N5283 variants, maintaining standardized electrical characteristics for interchangeability in legacy and new designs.
Replacement Considerations
Direct substitutes include the JAN1N5283/TR from Microchip Technology and generic 1N5283 devices from other semiconductor vendors. Verify pinout compatibility and package tolerance before substitution.
