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The 1N5299 TR PBFREE is a silicon field effect current regulator diode manufactured by Central Semiconductor Corp in the DO-35 axial through-hole package. It provides a nominal regulator current of 1.20 mA with a minimum of 1.02 mA and a maximum of 1.38 mA at a test voltage of 25 V. The device supports a peak operating voltage of 100 V and a power dissipation of 600 mW at 75°C ambient temperature. Electrical characteristics include a minimum dynamic impedance of 0.640 MΩ, a minimum knee impedance of 0.155 MΩ, and a maximum limiting voltage of 1.45 V at 0.8 times the minimum current.
Verify the specific ordering suffix to confirm plating type. The PBFREE suffix indicates lead-free plating, while TIN/LEAD indicates tin/lead plating. Confirm availability directly with Central Semiconductor or authorized distributors as stock levels vary. Ensure the component meets RoHS compliance requirements for your assembly process.
Select this component when a stable current source is needed across varying voltages within the 100 V limit. Verify that the required nominal current aligns closely with the 1.20 mA specification. Consider the thermal environment, as power dissipation ratings are specified at 75°C. Ensure the application can accommodate the axial DO-35 package dimensions.
This part belongs to the 1N5283 through 1N5314 series of silicon current limiting diodes. The series covers a broad range of regulator currents from approximately 0.22 mA to 5.41 mA. All devices in this family share the same DO-35 mechanical outline and general electrical testing conditions, differing primarily in their specific current regulation values.
Other parts within the 1N5283–1N5314 series may serve as substitutes if different current levels are acceptable. Cross-manufacturer equivalents must be verified against the specific dynamic and knee impedance parameters.