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The Central Semiconductor Corp 1N5300 TR PBFREE is a silicon field effect current regulator diode housed in the DO-35 axial leaded package. It provides a nominal regulator current of 1.30 mA, with a minimum of 1.11 mA and a maximum of 1.50 mA at a test voltage of 25 V. The device supports a peak operating voltage of 100 V and a power dissipation of 600 mW at 75°C ambient temperature. Electrical characteristics include a minimum dynamic impedance of 0.580 MΩ and a minimum knee impedance of 0.135 MΩ. The maximum limiting voltage is 1.50 V at an IL of 0.8 times the minimum IP. The component operates within a junction temperature range of -65°C to +200°C.
Verify that the ordering suffix matches the required plating specification. The PBFREE designation indicates lead-free plating. If tin/lead plating is necessary, the TIN/LEAD suffix must be added to the part number during procurement. Confirm the reel packaging quantity aligns with production requirements before finalizing orders.
Select this component when a specific nominal current of 1.30 mA is required within the 1N5283 through 1N5314 series. Ensure the application voltage does not exceed the 100 V peak operating limit. Consider the 600 mW power dissipation rating relative to the ambient temperature conditions. Verify that the DO-35 through-hole package fits the board layout constraints.
This part belongs to the 1N5283 through 1N5314 series of silicon current limiting diodes manufactured by Central Semiconductor Corp. The series utilizes a cost-effective DO-35 double plug case to provide benefits such as space savings and improved thermal characteristics. These devices are designed for applications requiring constant current over a wide voltage range.
Direct replacements within the same series include 1N5299 and 1N5301. Note that these parts have different nominal regulator currents (1.20 mA and 1.40 mA respectively). Verify that the alternative current values meet the circuit requirements before substitution.