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The JAN1N5303-1 is a current regulator diode manufactured by Microchip Technology, designed for stable current regulation in electronic circuits. It operates with a maximum voltage of 100V and provides a regulated current of 1.76mA. The device has a maximum power dissipation of 500mW and features a DO-204AA (DO-7) axial through-hole package. It supports a wide operating temperature range from -65°C to +175°C junction temperature and meets MIL-PRF-19500/463 military qualification standards.
Verify the specific suffix (e.g., /TR for tape and reel or bare part number for bulk) against the official datasheet to ensure correct packaging and handling requirements. Confirm that the military grade designation aligns with project procurement policies and quality assurance standards before finalizing orders.
Select this component when a fixed current source of approximately 1.76mA is required within a 100V compliance window. Ensure the circuit design accommodates the 500mW power dissipation limit at the maximum operating junction temperature of 175°C. Verify compatibility with through-hole assembly processes if using the standard DO-7 package variant.
This part belongs to the JAN1N5303 series of current regulator diodes produced by Microchip Technology under its Microsemi division. It serves as a specialized discrete semiconductor solution for applications requiring precise current control without active feedback loops, distinct from general-purpose rectifier or Zener diodes.
Direct substitutes include other military-grade current regulator diodes with matching 1.76mA regulation and 100V breakdown ratings. Cross-reference pinout and package dimensions (DO-7) to ensure physical compatibility. Verify thermal performance characteristics match the original design constraints.