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The 1N5306-1/TR is a silicon current regulator diode manufactured by Microchip Technology. It provides a regulated current of 2.2 mA with a maximum limiting voltage of 1.95 V. The device supports a maximum power dissipation of 0.5 W and can withstand a peak repetitive reverse voltage of 100 V. Designed for through-hole mounting, it utilizes the DO-7 axial leaded package. The component operates within a junction temperature range of -65°C to +175°C.
Verify the specific suffix designation against official Microchip documentation to confirm tape-and-reel packaging configuration. Ensure the procurement channel sources directly from authorized distributors or the manufacturer to guarantee component authenticity and traceability. Cross-reference the datasheet revision date to ensure compliance with current manufacturing standards.
Select this component when a stable 2.2 mA current source is required within a 100 V reverse voltage limit. The DO-7 package is suitable for applications requiring robust mechanical stability. Verify that the operating environment remains within the specified -65°C to +175°C junction temperature range to ensure long-term reliability and performance consistency.
This part belongs to the 1N5283-1 through 1N5314-1 series of 0.5-watt current regulators. The series offers various current options from 0.22 mA to 4.7 mA in standard tolerances. These devices serve as counterparts to Zener diodes, regulating current over broad voltage ranges rather than voltage over broad current ranges.
Compatible substitutes include other parts from the 1N53xx-1 series with matching 2.2 mA regulation characteristics. Verify pinout compatibility and package dimensions before substitution. Ensure alternative components meet the same 100 V reverse voltage and 0.5 W power dissipation requirements.