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The 1N5306 is a silicon current regulator diode manufactured by Central Semiconductor Corp. It provides a constant current of 2.2 mA with a maximum limiting voltage of 1.95 V and a minimum dynamic impedance of 370,000 Ω. The component utilizes a DO-35 axial leaded package (O-LALF-W2) with two pins. It operates as a single-element device with an isolated case connection. The unit is leaded and non-RoHS compliant.
Verify compliance requirements before procurement as the component is explicitly noted as non-RoHS compliant and contains lead. Confirm that the DO-35 package dimensions match the target PCB layout. Ensure the 2.2 mA regulation current aligns with circuit design specifications. Check for any specific handling requirements associated with leaded components in modern manufacturing environments.
Select this component when a fixed low-current regulation of 2.2 mA is required without complex active circuitry. The DO-35 package suits applications needing simple through-hole integration. Consider the 1.95 V voltage drop across the device during power budget calculations. Verify that the high dynamic impedance meets the stability needs of the specific load application.
This part belongs to the family of current regulator diodes produced by Central Semiconductor. These devices are designed to replace traditional resistor-based current limiting solutions where tighter tolerance and temperature stability are necessary. The 1N5306 specifically targets applications requiring precise, low-level current control in a passive form factor.
Consult official manufacturer documentation for direct cross-reference data. Generic equivalents may vary in regulation current accuracy or dynamic impedance. Verify pinout compatibility and thermal characteristics before substitution.