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The 1N5306E3 is a silicon current regulator diode manufactured by Microchip Technology. It belongs to the 1N5283-1 through 1N5314-1 series, which provides fixed current regulation over a broad voltage range. The device operates with a nominal regulating current of 2.2 mA and features a maximum limiting voltage of 1.95 V. It has a maximum power dissipation rating of 0.5 W and can withstand a maximum repetitive peak reverse voltage of 100 V. The component utilizes an axial leaded package configuration.
Verify the specific ordering suffix against official Microchip documentation to confirm compliance status and package type. Ensure the selected variant matches the required regulatory standards for the intended deployment environment. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before acquisition.
Select this component when a constant current source is required within a low-power design constraint. The 2.2 mA output is suitable for biasing small-signal transistors or LEDs where voltage regulation is less critical than current stability. Evaluate the thermal environment to ensure the 0.5 W power dissipation limit is not exceeded during operation.
This device is part of a widely recognized series of current regulator diodes originally developed by Microsemi and now produced by Microchip Technology. The series offers various current values from 0.22 mA to 4.7 mA, providing designers with flexible options for current control applications without the complexity of active circuitry.
Compatible substitutes include other parts from the 1N5283-1 through 1N5314-1 series that share the same 2.2 mA nominal current rating. Verify pinout compatibility and package dimensions when replacing axial-leaded units with surface-mount equivalents such as the DO-213AB variants.