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The 1N5309E3 is a current regulator diode manufactured by Microchip Technology, designed for applications requiring stable current regulation. It features a maximum anode-to-cathode voltage of 100V and a regulated current of 3.3mA. The device supports a power dissipation of 500mW and operates within a junction temperature range of -65°C to +175°C. Packaged in the DO-204AA (DO-7) axial leaded format, it is suitable for through-hole mounting. This component provides a simple, two-terminal solution for constant current sources without the complexity of active circuitry.
Verify the specific suffix E3 confirms lead-free compliance when sourcing. Confirm the DO-7 axial package matches your PCB footprint requirements. Check manufacturer documentation for any recent PCNs regarding assembly site or labeling changes that may affect part identification. Ensure the 500mW power rating aligns with your thermal design constraints under expected operating conditions.
Select this component when a simple, passive constant current source is required. The 3.3mA value is fixed; verify this matches your load requirements. Consider the 100V breakdown voltage as the maximum allowable voltage drop across the device. The wide temperature range makes it suitable for industrial environments where standard silicon devices might fail.
This part belongs to the 1N53xx series of current regulator diodes from Microchip Technology. These devices are legacy equivalents often used in designs originally specified with generic JEDEC numbering. The series offers various current values ranging from microamps to milliamps, providing a standardized option for current limiting tasks across different electronic systems.
Direct replacements include other 1N5309 variants from different manufacturers, provided they meet the 3.3mA current and 100V voltage specifications. Verify pinout compatibility for axial packages. Cross-reference with datasheets from competitors like Vishay or ON Semiconductor for equivalent performance metrics.